通过光调制拉曼散射研究ZnSe/GaAs异质结构中的界面电子陷阱。
Interfacial electronic traps at ZnSe/GaAs heterostructures studied by photomodulation Raman scattering.
作者信息
El-Brolossy T A, Abdalla S, Negm S, Talaat H
机构信息
Physics Department, Faculty of Science, Ain Shams University, Cairo, Egypt.
出版信息
J Phys Condens Matter. 2006 May 3;18(17):4189-95. doi: 10.1088/0953-8984/18/17/007. Epub 2006 Apr 13.
PMID:21690773
Abstract
Photomodulation Raman scattering spectroscopy has been employed to study free charge trapping mechanisms at ZnSe-GaAs(001) heterostructure interfaces. This technique reveals that the interfacial region contains predominantly hole traps. Time dependent measurements of the photomodulated Raman scattering intensity show that interfacial charge-trap lifetime is ≈30 s for both electrons and holes.
摘要
光调制拉曼散射光谱已被用于研究ZnSe-GaAs(001)异质结构界面处的自由电荷俘获机制。该技术表明，界面区域主要包含空穴陷阱。光调制拉曼散射强度的时间相关测量表明，电子和空穴的界面电荷陷阱寿命均约为30秒。
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