Tabib-Azar M, Moller H J, Shoemaker N
Case Western Reserve Univ., Cleveland, OH.
IEEE Trans Ultrason Ferroelectr Freq Control. 1993;40(2):149-53. doi: 10.1109/58.212563.
A novel technique based on the measurement of the frequency spectrum of the acoustoelectric current is used to determine the trapping time associated with dominant traps in p-type CuInSe(2). At room temperature, two trap levels with trapping time constant of 2x10(-4) and 6.7x10(-5) s are detected. Under white incandescent light, two more traps with trapping time constants of 1.4x10(-3) and 6x10(-4) s are detected. The minority (electron) and majority (hole) carrier mobilities in this material are also measured using the acoustoelectric technique, and they are 6+/-3 and 3.1+/-0.15 cm(2)/V-s, respectively. The hole carrier concentration was estimated to be around 5x10(15) cm(-3), and the surface of the sample was depleted.
一种基于声电流频谱测量的新技术被用于确定与p型CuInSe₂中主导陷阱相关的俘获时间。在室温下，检测到两个俘获时间常数分别为2×10⁻⁴和6.7×10⁻⁵秒的陷阱能级。在白色白炽灯下，又检测到两个俘获时间常数分别为1.4×10⁻³和6×10⁻⁴秒的陷阱。该材料中的少数（电子）和多数（空穴）载流子迁移率也使用声电技术进行了测量，它们分别为6±3和3.1±0.15 cm²/V-s。空穴载流子浓度估计约为5×10¹⁵ cm⁻³，并且样品表面被耗尽。
