Lutsev L V
Research Institute 'Ferrite-Domen', Chernigovskaya 8, Saint Petersburg, 196084, Russia.
J Phys Condens Matter. 2006 Jul 5;18(26):5881-94. doi: 10.1088/0953-8984/18/26/008. Epub 2006 Jun 16.
We have calculated the exchange interaction between electrons in the accumulation electron layer in the semiconductor near the interface and electrons in the ferromagnet in the ferromagnet/semiconductor heterostructure. It is found that the exchange interaction forms the potential barrier for spin-polarized electrons. The barrier height strongly depends on the difference of chemical potentials between the semiconductor and the ferromagnet. The maximum of the potential barrier height on the temperature dependence is due to the existence of localized electron states in the accumulation layer. In the framework of the developed theoretical model, the injection magnetoresistance effect observed in semiconductor/granular film heterostructures with ferromagnetic metal nanoparticles is explained. A spin filter on the base of granular film/semiconductor/granular film heterostructures operated at room temperature is proposed.
我们计算了铁磁体/半导体异质结构中靠近界面的半导体积累电子层中的电子与铁磁体中的电子之间的交换相互作用。结果发现，这种交换相互作用形成了自旋极化电子的势垒。势垒高度强烈依赖于半导体和铁磁体之间化学势的差异。势垒高度随温度变化的最大值归因于积累层中存在局域电子态。在所建立的理论模型框架内，解释了在具有铁磁金属纳米颗粒的半导体/颗粒膜异质结构中观察到的注入磁阻效应。提出了一种基于颗粒膜/半导体/颗粒膜异质结构且在室温下工作的自旋滤波器。
