钌 - 锰氧化还原相互作用对脉冲电子沉积的La(1 - x)Pb(x)Mn(0.8)Ru(0.2)O(3)（0.2≤x≤0.4）薄膜中空穴载流子密度的影响。
Effect of Ru-Mn redox interactions on the hole carrier density in pulsed electron deposited La(1-x)Pb(x)Mn(0.8)Ru(0.2)O(3) (0.2≤x≤0.4) thin films.
作者信息
Sundar Manoharan S, Singh Brajendra, Sahu Ranjan K, Zimmer A, Lim S-H, Salamanca-Riba L G, Chandra V
机构信息
Materials Chemistry Laboratory, Indian Institute of Technology Kanpur, Kanpur-208016, India.
出版信息
J Phys Condens Matter. 2008 Jun 11;20(23):235205. doi: 10.1088/0953-8984/20/23/235205. Epub 2008 Apr 30.
Pulsed electron deposited thin films of Ru substituted La(1-x)Pb(x)Mn(0.8)Ru(0.2)O(3) (0.2≤x≤0.4) show an increase in the magneto-resistance ratio by ∼5-15% at the respective metal to insulator transition (T(MIT)) temperature when compared to the parent La(0.6)Pb(0.4)MnO(3) thin film. A systematic decrease in T(MIT) is observed from ∼310 to ∼260 K when the hole (Pb) concentration varies from 40 to 20% with constant 20% Ru substitution at the Mn site. The x-ray rocking curve and high-resolution transmission electron microscopy (HRTEM) images of the thin films suggest that Ru occupies the Mn site and shows epitaxial growth of the films on the LaAlO(3) (LAO) substrate. Transport and magneto-resistive properties show that Ru substitution maintains a considerable hole carrier density (due to Mn(4+):t(2g)(3)e(g)(0)/Ru(5+):t(2g)(3)e(g)(0)) even for La(0.8)Pb(0.2)Mn(0.8)Ru(0.2)O(3) (8282) composition, which influences the double exchange interactions.
脉冲电子沉积的Ru取代的La(1 - x)Pb(x)Mn(0.8)Ru(0.2)O(3)（0.2≤x≤0.4）薄膜在各自的金属 - 绝缘体转变（T(MIT)）温度下，与母体La(0.6)Pb(0.4)MnO(3)薄膜相比，磁电阻比增加了约5 - 15%。当空穴（Pb）浓度从40%变化到20%且Mn位点Ru取代率恒定为20%时，观察到T(MIT)从约310 K系统地降低到约260 K。薄膜的x射线摇摆曲线和高分辨率透射电子显微镜（HRTEM）图像表明，Ru占据Mn位点，并且薄膜在LaAlO(3)（LAO）衬底上呈现外延生长。输运和磁电阻特性表明，即使对于La(0.8)Pb(0.2)Mn(0.8)Ru(0.2)O(3)（8282）组成，Ru取代也保持了相当大的空穴载流子密度（由于Mn(4 +):t(2g)(3)e(g)(0)/Ru(5 +):t(2g)(3)e(g)(0)），这影响了双交换相互作用。
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