Perna P, Méchin L, Chauvat M P, Ruterana P, Simon Ch, Scotti di Uccio U
GREYC (UMR 6072)-CNRS-ENSICAEN, Universite Caen Basse-Normandie, 6 Boulevard Maréchal Juin, 14050 CAEN cedex, France. CNR-INFM CRS Coherentia and Dipartimento Scienze Fisiche, Universita di Napoli Federico II, Complesso Universitario di Monte S Angelo, via Cinthia 80126 NAPOLI, Italy.
J Phys Condens Matter. 2009 Jul 29;21(30):306005. doi: 10.1088/0953-8984/21/30/306005. Epub 2009 Jul 6.
Two kinds of epitaxial structures were grown by standard pulsed laser deposition on (001) Si, namely La(0.7)Sr(0.3)MnO(3)/Bi(4)Ti(3)O(12)/CeO(2) /YSZ/Si (BTO-based), and La(0.7)Sr(0.3)MnO(3)/SrTiO(3)/CeO(2) /YSZ/Si (STO-based) multilayers. The samples were investigated by means of x-ray diffraction, transmission electron microscopy, magnetic and transport measurements. The Curie temperature T(C) of the BTO-based samples was found to be higher (360 K) than for the typical reference epitaxial LSMO film grown on (001) SrTiO(3) single crystal (345 K), due to high compressive in-plane strain. The STO-based samples show high structural quality, low roughness and high T(C) (350 K), making them interesting candidates for use in innovative LSMO-based bolometers or spintronic devices operating at room temperature.
通过标准脉冲激光沉积在（001）Si上生长了两种外延结构，即La(0.7)Sr(0.3)MnO(3)/Bi(4)Ti(3)O(12)/CeO(2)/YSZ/Si（基于BTO）和La(0.7)Sr(0.3)MnO(3)/SrTiO(3)/CeO(2)/YSZ/Si（基于STO）多层结构。通过X射线衍射、透射电子显微镜、磁性和输运测量对样品进行了研究。发现基于BTO的样品的居里温度T(C)（360 K）高于在（001）SrTiO(3)单晶上生长的典型参考外延LSMO薄膜的居里温度（345 K），这是由于高的面内压缩应变。基于STO的样品显示出高的结构质量、低粗糙度和高T(C)（350 K），使其成为用于在室温下工作的创新型基于LSMO的测辐射热计或自旋电子器件的有趣候选材料。
