School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052, Australia.
Nano Lett. 2011 Aug 10;11(8):3346-54. doi: 10.1021/nl201719w. Epub 2011 Jul 5.
Development of magnetoelectric, electromechanical, and photovoltaic devices based on mixed-phase rhombohedral-tetragonal (R-T) BiFeO(3) (BFO) systems is possible only if the control of the engineered R phase variants is realized. Accordingly, we explore the mechanism of a bias induced phase transformation in this system. Single point spectroscopy demonstrates that the T → R transition is activated at lower voltages compared to T → -T polarization switching. With phase field modeling, the transition is shown to be electrically driven. We further demonstrate that symmetry of formed R-phase rosettes can be broken by a proximal probe motion, allowing controlled creation of R variants with defined orientation. This approach opens a pathway to designing next-generation magnetoelectronic and data storage devices in the nanoscale.
基于混相菱方-四方(R-T)BiFeO3(BFO)体系的磁电、机电和光伏器件的发展只有在控制工程化 R 相变体的情况下才有可能。因此,我们探索了该系统中偏压诱导相转变的机制。单点光谱表明,与 T→-T 极化反转相比,T→R 转变在较低的电压下被激活。通过相场建模,表明该转变是由电驱动的。我们进一步证明,通过近场探针的运动可以打破形成的 R 相玫瑰花结的对称性,从而允许以可控的方式创建具有确定取向的 R 变体。这种方法为在纳米尺度上设计下一代磁电子和数据存储器件开辟了道路。