Institute for Chemical Research, Kyoto University, Kyoto 611-0011, Japan.
J Chem Phys. 2011 Jun 21;134(23):234702. doi: 10.1063/1.3600065.
The current flowing through a thin film of copper phthalocyanine vacuum deposited on a single crystal sapphire [0001] surface was measured during film growth from 0 to 93 nm. The results, expressed as conductance vs. nominal film thickness, indicate three distinct film growth regions. Conductive material forms below about 5 nm and again above 35 nm, but in the intermediate thicknesses the film conductance was observed to decrease with increasing film thickness. With the aid of ac-AFM topology images taken ex situ, the conductance results are explained based on the Stranski-Krastanov (2D + 3D) film growth mechanism, in which the formation of a thin wetting layer is followed by the growth of discrete islands that eventually coalesce into an interpenetrating, conductive network.
当前通过铜酞菁真空沉积在单晶蓝宝石[0001]表面上的薄膜进行测量，从 0 到 93nm 进行薄膜生长。结果表示为电导与名义薄膜厚度的关系，表明有三个明显的薄膜生长区域。在约 5nm 以下和 35nm 以上形成了导电材料，但在中间厚度下，观察到薄膜电导随薄膜厚度的增加而减小。借助于原位取的交流原子力显微镜形貌图像，根据 Stranski-Krastanov（2D+3D）薄膜生长机制解释了电导结果，其中形成薄的润湿层，然后生长离散的岛，最终合并成相互贯穿的导电网络。
