Faculty of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan.
J Phys Condens Matter. 2011 Aug 3;23(30):305001. doi: 10.1088/0953-8984/23/30/305001. Epub 2011 Jun 28.
We report on a core level photoemission study of the formation of an ultrathin SiO(x) layer grown at the interface of a titanium-covered Si(001) surface. Oxygen exposure at room temperature induces a large chemical shift of the Si 2p state, predominantly assigned to Si(4+). The results indicate that a SiO(2 - δ) layer, close to the stoichiometry of SiO(2), is formed below the TiO(x) film. The thickness of the SiO(2 - δ) layer is estimated to be ∼ 0.9 nm, corresponding to three to four oxide layers. Further chemical shift caused by annealing is attributed to the formation of titanium silicate (TiSi(x)O(y)).
我们报告了一项关于在钛覆盖的硅（001）表面界面上生长的超薄 SiO(x) 层形成的核心级光电子发射研究。室温下的氧气暴露会导致 Si 2p 态的化学位移很大，主要归因于 Si(4+)。结果表明，在 TiO(x) 薄膜下方形成了接近 SiO(2)化学计量的 SiO(2 - δ)层。SiO(2 - δ)层的厚度估计约为 0.9nm，对应于三到四层氧化物。进一步的退火引起的化学位移归因于钛硅酸盐（TiSi(x)O(y)）的形成。
