Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan, Republic of China.
Microsc Microanal. 2011 Dec;17(6):944-9. doi: 10.1017/S1431927611011901. Epub 2011 Oct 11.
Atomic force microscopy probe-induced large-area ultrathin SiO(x) (x ≡ O/Si content ratio and x > 2) protrusions only a few nanometers high on a SiO(2) layer were characterized by scanning photoemission microscopy (SPEM) and X-ray photoemission spectroscopy (XPS). SPEM images of the large-area ultrathin SiO(x) protrusions directly showed the surface chemical distribution and chemical state specifications. The peak intensity ratios of the XPS spectra of the large-area ultrathin SiO(x) protrusions provided the elemental quantification of the Si 2p core levels and Si oxidation states (such as the Si(4+), Si(3+), Si(2+), and Si(1+) species). The O/Si content ratio (x) was evidently determined by the height of the large-area ultrathin SiO(x) protrusions.
原子力显微镜探针诱导的大面积超薄 SiO(x)（x ≡ O/Si 含量比，x > 2）突起物仅几纳米高，位于 SiO(2)层上，通过扫描光电发射显微镜 (SPEM) 和 X 射线光电子能谱 (XPS) 进行了表征。大面积超薄 SiO(x)突起物的 SPEM 图像直接显示了表面化学分布和化学状态规格。大面积超薄 SiO(x)突起物的 XPS 光谱的峰值强度比提供了 Si 2p 芯能级和 Si 氧化态（如 Si(4+)、Si(3+)、Si(2+)和 Si(1+)物种）的元素定量。O/Si 含量比 (x) 显然由大面积超薄 SiO(x)突起物的高度决定。
