Dos Santos Lara F, Gobato Yara Galvão, Teodoro Márcio D, Lopez-Richard Victor, Marques Gilmar E, Brasil Maria Jsp, Orlita Milan, Kunc Jan, Maude Duncan K, Henini Mohamed, Airey Robert J
Physics Department, Federal University of São Carlos, São Carlos, Brazil.
Nanoscale Res Lett. 2011 Jan 25;6(1):101. doi: 10.1186/1556-276X-6-101.
We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW) PL presents strong circular polarization (values up to -70% at 19 T). The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g-factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects.
我们研究了在与隧道电流平行的磁场下，非对称n型GaAs/AlAs/GaAlAs共振隧穿二极管中的偏振分辨光致发光（PL）。量子阱（QW）的PL呈现出很强的圆偏振（在19 T时高达-70%）。来自GaAs接触层的光发射显示出高自旋极化二维电子气和空穴气的证据，这会影响量子阱中载流子的自旋极化。然而，量子阱中的圆偏振度还取决于其他各种参数，包括不同层的g因子、沿结构的载流子密度以及塞曼效应和 Rashba 效应。
