关于二维电子系统中纳米尺度散射体附近的直接绝缘体 - 量子霍尔转变

On the direct insulator-quantum Hall transition in two-dimensional electron systems in the vicinity of nanoscaled scatterers.

作者信息

Liang Chi-Te, Lin Li-Hung, Kuang Yoa Chen, Lo Shun-Tsung, Wang Yi-Ting, Lou Dong-Sheng, Kim Gil-Ho, Yuan-Huei Chang, Ochiai Yuichi, Aoki Nobuyuki, Chen Jeng-Chung, Lin Yiping, Chun-Feng Huang, Lin Sheng-Di, Ritchie David A

机构信息

Department of Physics, National Taiwan University, Taipei 106, Taiwan.

出版信息

Nanoscale Res Lett. 2011 Feb 11;6(1):131. doi: 10.1186/1556-276X-6-131.

DOI:10.1186/1556-276X-6-131

PMID:21711637

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3211178/

Abstract

A direct insulator-quantum Hall (I-QH) transition corresponds to a crossover/transition from the insulating regime to a high Landau level filling factor ν > 2 QH state. Such a transition has been attracting a great deal of both experimental and theoretical interests. In this study, we present three different two-dimensional electron systems (2DESs) which are in the vicinity of nanoscaled scatterers. All these three devices exhibit a direct I-QH transition, and the transport properties under different nanaoscaled scatterers are discussed.

摘要

直接绝缘体 - 量子霍尔（I - QH）转变对应于从绝缘态到高朗道能级填充因子ν> 2的量子霍尔（QH）态的交叉/转变。这种转变一直吸引着大量的实验和理论研究兴趣。在本研究中，我们展示了三种靠近纳米级散射体的不同二维电子系统（2DES）。所有这三种器件都表现出直接的I - QH转变，并讨论了在不同纳米级散射体下的输运特性。