• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

多层外延石墨烯中的狄拉克费米子加热、电流标度和直接绝缘量子霍尔转变。

Dirac fermion heating, current scaling, and direct insulator-quantum Hall transition in multilayer epitaxial graphene.

机构信息

Graduate Institute of Applied Physics, National Taiwan University, Taipei 106, Taiwan.

出版信息

Nanoscale Res Lett. 2013 Aug 22;8(1):360. doi: 10.1186/1556-276X-8-360.

DOI:10.1186/1556-276X-8-360
PMID:23968131
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3765374/
Abstract

We have performed magnetotransport measurements on multilayer epitaxial graphene. By increasing the driving current I through our graphene devices while keeping the bath temperature fixed, we are able to study Dirac fermion heating and current scaling in such devices. Using zero-field resistivity as a self thermometer, we are able to determine the effective Dirac fermion temperature (TDF) at various driving currents. At zero field, it is found that TDF ∝ I≈1/2. Such results are consistent with electron heating in conventional two-dimensional systems in the plateau-plateau transition regime. With increasing magnetic field B, we observe an I-independent point in the measured longitudinal resistivity ρxx which is equivalent to the direct insulator-quantum Hall (I-QH) transition characterized by a temperature-independent point in ρxx. Together with recent experimental evidence for direct I-QH transition, our new data suggest that such a transition is a universal effect in graphene, albeit further studies are required to obtain a thorough understanding of such an effect.

摘要

我们对多层外延石墨烯进行了磁输运测量。通过在保持浴温不变的情况下增加通过石墨烯器件的驱动电流 I,我们能够研究这些器件中的狄拉克费米子加热和电流缩放。使用零场电阻率作为自温度计,我们能够确定在不同驱动电流下的有效狄拉克费米子温度(TDF)。在零场时,发现 TDF∝I≈1/2。这些结果与传统二维系统中在平台-平台过渡区的电子加热一致。随着磁场 B 的增加,我们观察到测量的纵向电阻率 ρxx 中存在一个与 I 无关的点,这相当于具有 ρxx 中与温度无关的点的直接绝缘-量子霍尔(I-QH)转变。结合最近关于直接 I-QH 转变的实验证据,我们的新数据表明,这种转变是石墨烯中的一种普遍现象,尽管需要进一步的研究来全面理解这种效应。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a1c5/3765374/0b2aee3333e3/1556-276X-8-360-7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a1c5/3765374/4591768b6627/1556-276X-8-360-1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a1c5/3765374/eded00c18597/1556-276X-8-360-2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a1c5/3765374/65de6eb122b2/1556-276X-8-360-3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a1c5/3765374/1968db4adbb1/1556-276X-8-360-4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a1c5/3765374/4543e645bcb7/1556-276X-8-360-5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a1c5/3765374/b07de16960a6/1556-276X-8-360-6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a1c5/3765374/0b2aee3333e3/1556-276X-8-360-7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a1c5/3765374/4591768b6627/1556-276X-8-360-1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a1c5/3765374/eded00c18597/1556-276X-8-360-2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a1c5/3765374/65de6eb122b2/1556-276X-8-360-3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a1c5/3765374/1968db4adbb1/1556-276X-8-360-4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a1c5/3765374/4543e645bcb7/1556-276X-8-360-5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a1c5/3765374/b07de16960a6/1556-276X-8-360-6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a1c5/3765374/0b2aee3333e3/1556-276X-8-360-7.jpg

相似文献

1
Dirac fermion heating, current scaling, and direct insulator-quantum Hall transition in multilayer epitaxial graphene.多层外延石墨烯中的狄拉克费米子加热、电流标度和直接绝缘量子霍尔转变。
Nanoscale Res Lett. 2013 Aug 22;8(1):360. doi: 10.1186/1556-276X-8-360.
2
Experimental evidence for direct insulator-quantum Hall transition in multi-layer graphene.多层石墨烯中直接绝缘量子霍尔转变的实验证据。
Nanoscale Res Lett. 2013 May 6;8(1):214. doi: 10.1186/1556-276X-8-214.
3
Current Scaling and Dirac Fermion Heating in Multi-Layer Graphene.多层石墨烯中的电流缩放与狄拉克费米子加热
J Nanosci Nanotechnol. 2015 Feb;15(2):1195-8. doi: 10.1166/jnn.2015.9038.
4
Insulator-quantum Hall transitionin monolayer epitaxial graphene.单层外延石墨烯中的绝缘体 - 量子霍尔转变
RSC Adv. 2016;6(76):71977-71982. doi: 10.1039/C6RA07859A. Epub 2016 Jul 22.
5
Manetoresistance of Ultralow-Hole-Density Monolayer Epitaxial Graphene Grown on SiC.在碳化硅上生长的超低空穴密度单层外延石墨烯的载流子迁移率
Materials (Basel). 2019 Aug 23;12(17):2696. doi: 10.3390/ma12172696.
6
Self-duality and a Hall-insulator phase near the superconductor-to-insulator transition in indium-oxide films.氧化铟薄膜中自对偶性及超导体-绝缘体转变附近的量子霍尔绝缘相
Proc Natl Acad Sci U S A. 2016 Jan 12;113(2):280-5. doi: 10.1073/pnas.1522435113. Epub 2015 Dec 28.
7
A topological Dirac insulator in a quantum spin Hall phase.处于量子自旋霍尔相的拓扑狄拉克绝缘体。
Nature. 2008 Apr 24;452(7190):970-4. doi: 10.1038/nature06843.
8
Tunable insulator-quantum Hall transition in a weakly interacting two-dimensional electron system.弱相互作用二维电子体系中的可调谐绝缘量子霍尔转变。
Nanoscale Res Lett. 2013 Jul 3;8(1):307. doi: 10.1186/1556-276X-8-307.
9
Three-dimensional quantum Hall effect and metal-insulator transition in ZrTe.ZrTe 中的三维量子霍尔效应和金属-绝缘体相变。
Nature. 2019 May;569(7757):537-541. doi: 10.1038/s41586-019-1180-9. Epub 2019 May 8.
10
Scaling behavior of the quantum phase transition from a quantum-anomalous-Hall insulator to an axion insulator.从量子反常霍尔绝缘体到轴子绝缘体的量子相变的标度行为。
Nat Commun. 2020 Sep 10;11(1):4532. doi: 10.1038/s41467-020-18312-z.

引用本文的文献

1
Manetoresistance of Ultralow-Hole-Density Monolayer Epitaxial Graphene Grown on SiC.在碳化硅上生长的超低空穴密度单层外延石墨烯的载流子迁移率
Materials (Basel). 2019 Aug 23;12(17):2696. doi: 10.3390/ma12172696.
2
Temperature dependence of electron density and electron-electron interactions in monolayer epitaxial graphene grown on SiC.在碳化硅上生长的单层外延石墨烯中电子密度和电子-电子相互作用的温度依赖性
2d Mater. 2017 Jun;4(2). doi: 10.1088/2053-1583/aa55b9. Epub 2017 Jan 25.

本文引用的文献

1
Experimental evidence for direct insulator-quantum Hall transition in multi-layer graphene.多层石墨烯中直接绝缘量子霍尔转变的实验证据。
Nanoscale Res Lett. 2013 May 6;8(1):214. doi: 10.1186/1556-276X-8-214.
2
Hot electron cooling by acoustic phonons in graphene.石墨烯中声子的热电子冷却。
Phys Rev Lett. 2012 Aug 3;109(5):056805. doi: 10.1103/PhysRevLett.109.056805. Epub 2012 Aug 2.
3
Probing temperature-driven flow lines in a gated two-dimensional electron gas with tunable spin-splitting.用可调自旋劈裂探测门控二维电子气中的温度驱动流线。
J Phys Condens Matter. 2012 Oct 10;24(40):405801. doi: 10.1088/0953-8984/24/40/405801. Epub 2012 Sep 12.
4
Insulator, semiclassical oscillations and quantum Hall liquids at low magnetic fields.低磁场下的绝缘子、半经典振荡和量子霍尔液体。
J Phys Condens Matter. 2012 Oct 10;24(40):405601. doi: 10.1088/0953-8984/24/40/405601. Epub 2012 Sep 12.
5
Unconventional sequence of fractional quantum Hall states in suspended graphene.悬浮石墨烯中的非常规分数量子霍尔态序列。
Science. 2012 Sep 7;337(6099):1196-9. doi: 10.1126/science.1224784.
6
Disordered Fermi liquid in epitaxial graphene from quantum transport measurements.量子输运测量揭示外延石墨烯中的无序费米液体
Phys Rev Lett. 2011 Oct 14;107(16):166602. doi: 10.1103/PhysRevLett.107.166602. Epub 2011 Oct 12.
7
Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide.大面积和结构化的外延石墨烯是通过碳化硅的限制控制升华产生的。
Proc Natl Acad Sci U S A. 2011 Oct 11;108(41):16900-5. doi: 10.1073/pnas.1105113108. Epub 2011 Sep 29.
8
On the direct insulator-quantum Hall transition in two-dimensional electron systems in the vicinity of nanoscaled scatterers.关于二维电子系统中纳米尺度散射体附近的直接绝缘体 - 量子霍尔转变
Nanoscale Res Lett. 2011 Feb 11;6(1):131. doi: 10.1186/1556-276X-6-131.
9
Wafer-scale graphene integrated circuit.晶圆级石墨烯集成电路。
Science. 2011 Jun 10;332(6035):1294-7. doi: 10.1126/science.1204428.
10
Towards a quantum resistance standard based on epitaxial graphene.基于外延石墨烯的量子电阻基准。
Nat Nanotechnol. 2010 Mar;5(3):186-9. doi: 10.1038/nnano.2009.474. Epub 2010 Jan 17.