Jacques Emmanuel, Pichon Laurent, Debieu Olivier, Gourbilleau Fabrice
Groupe Microélectronique, IETR, UMR CNRS 6164, Campus de Beaulieu, Rennes Cedex, 35042 France.
Nanoscale Res Lett. 2011 Feb 24;6(1):170. doi: 10.1186/1556-276X-6-170.
We examined and compared the electrical properties of silica (SiO2) and silicon oxynitride (SiOxNy) layers embedding silicon nanoclusters (Sinc) integrated in metal-insulator-semiconductor (MIS) devices. The technique used for the deposition of such layers is the reactive magnetron sputtering of a pure SiO2 target under a mixture of hydrogen/argon plasma in which nitrogen is incorporated in the case of SiOxNy layer. Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si devices were fabricated and electrically characterized. Results showed a high rectification ratio (>104) for the SiOxNy-based device and a resistive behavior when nitrogen was not incorporating (SiO2-based device). For rectifier devices, the ideality factor depends on the SiOxNy layer thickness. The conduction mechanisms of both MIS diode structures were studied by analyzing thermal and bias dependences of the carriers transport in relation with the nitrogen content.
我们研究并比较了嵌入集成在金属-绝缘体-半导体（MIS）器件中的硅纳米团簇（Sinc）的二氧化硅（SiO₂）层和氮氧化硅（SiOxNy）层的电学性质。用于沉积此类层的技术是在氢/氩等离子体混合物下对纯SiO₂靶进行反应磁控溅射，在SiOxNy层的情况下会掺入氮。制备了Al/SiOxNy-Sinc/p-Si和Al/SiO₂-Sinc/p-Si器件并进行了电学表征。结果表明，基于SiOxNy的器件具有高整流比（>10⁴），而当不掺入氮时（基于SiO₂的器件）呈现电阻性行为。对于整流器器件，理想因子取决于SiOxNy层的厚度。通过分析与氮含量相关的载流子输运的热和偏置依赖性，研究了两种MIS二极管结构的传导机制。
