Das Nayan C, Kim Minjae, Hong Sung-Min, Jang Jae-Hyung
Gwangju Institute of Science and Technology, School of Electrical Engineering and Computer Science, Gwangju 61005, Korea.
Korea Institute of Energy Technology, School of Energy Technology, Naju 58330, Korea.
Micromachines (Basel). 2022 Apr 12;13(4):604. doi: 10.3390/mi13040604.
This study investigates the switching characteristics of the silicon oxynitride (SiOxNy)-based bipolar resistive random-access memory (RRAM) devices at different operating ambiances at temperatures ranging from 300 K to 77 K. The operating ambiances (open air or vacuum) and temperature affect the device’s performance. The electroforming-free multilevel bipolar Au/Ni/SiOxNy/p+-Si RRAM device (in open-air) becomes bilevel in a vacuum with an on/off ratio >104 and promising data retention properties. The device becomes more resistive with cryogenic temperatures. The experimental results indicate that the presence and absence of moisture (hydrogen and hydroxyl groups) in open air and vacuum, respectively, alter the elemental composition of the amorphous SiOxNy active layer and Ni/SiOxNy interface region. Consequently, this affects the overall device performance. Filament-type resistive switching and trap-controlled space charge limited conduction (SCLC) mechanisms in the bulk SiOxNy layer are confirmed.
本研究调查了氮氧化硅（SiOxNy）基双极电阻式随机存取存储器（RRAM）器件在300 K至77 K温度范围内不同工作环境下的开关特性。工作环境（空气或真空）和温度会影响器件性能。无电形成的多级双极Au/Ni/SiOxNy/p+-Si RRAM器件（在空气中）在真空中变为双电平，开/关比>104且具有良好的数据保持特性。该器件在低温下电阻增大。实验结果表明，空气中的水分（氢和羟基）以及真空中水分的有无分别改变了非晶SiOxNy活性层和Ni/SiOxNy界面区域的元素组成。因此，这会影响器件的整体性能。证实了块状SiOxNy层中的丝状电阻开关和陷阱控制的空间电荷限制传导（SCLC）机制。
