Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India.
Macromol Rapid Commun. 2011 Aug 17;32(16):1277-83. doi: 10.1002/marc.201100292. Epub 2011 Jun 28.
Due to its unique electronic properties, graphene has already been identified as a promising material for future carbon based electronics. To develop graphene technology, the fabrication of a high quality P-N junction is a great challenge. Here, we describe a general technique to grow single crystalline polyaniline (PANI) films on graphene sheets using in situ polymerization via the oxidation-reduction of aniline monomer and graphene oxide, respectively, to fabricate a high quality P-N junction, which shows diode-like behavior with a remarkably low turn-on voltage (60 mV) and high rectification ratio (1880:1) up to a voltage of 0.2 V. The origin of these superior electronic properties is the preferential growth of a highly crystalline PANI film as well as lattice matching between the d-values [∼2.48 Å] of graphene and {120} planes of PANI.
由于其独特的电子特性，石墨烯已被确定为未来碳基电子产品有前途的材料。为了开发石墨烯技术，制造高质量的 P-N 结是一个巨大的挑战。在这里，我们描述了一种通用技术，通过苯胺单体和氧化石墨烯的氧化还原反应，原位聚合在石墨烯片上生长单晶聚苯胺 (PANI) 薄膜，以制造高质量的 P-N 结，该结表现出类似二极管的行为，具有极低的开启电压 (60mV) 和高达 0.2V 的高整流比 (1880:1)。这些优异的电子性能源于高度结晶的 PANI 薄膜的优先生长以及石墨烯的 d 值 [~2.48 Å] 和 PANI 的 {120} 面之间的晶格匹配。
