Chen Jiun-Ting, Lai Wei-Chih, Chen Chi-Heng, Yang Ya-Yu, Sheu Jinn-Kong, Lai Li-Wen
Institute of Electro-Optical Science and Engineering, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan City, Taiwan.
Opt Express. 2011 Jun 6;19(12):11873-9. doi: 10.1364/OE.19.011873.
We have demonstrated the electroluminescence (EL) of Ga:ZnO/i-ZnO-SiO2 nanocomposite/p-GaN n-i-p heterostructure light-emitting devices (LEDs). ZnO nano-clusters with sizes distributing from 2 to 7nm were found inside the co-sputtered i-ZnO-SiO2 nanocomposite layer under the observation of high-resolution transparent electron microscope. A clear UV EL at 376 nm from i-ZnO-SiO2 nanocomposite in these p-i-n heterostructure LEDs was observed under the forward current of 9 mA. The EL emission peak at 376 and 427nm of the Ga:ZnO/i-ZnO-SiO2 nanocomposite/p-GaN n-i-p heterostructure LEDs were attributed to the radiative recombination from the ZnO clusters and the Mg acceptor levels in the p-GaN layer, respectively.
我们已经展示了Ga:ZnO/i-ZnO-SiO2纳米复合材料/p-GaN n-i-p异质结构发光器件（LED）的电致发光（EL）特性。在高分辨率透射电子显微镜的观察下，发现在共溅射的i-ZnO-SiO2纳米复合层内部存在尺寸分布在2至7纳米的ZnO纳米团簇。在9 mA的正向电流下，观察到这些p-i-n异质结构LED中i-ZnO-SiO2纳米复合材料发出清晰的376 nm紫外EL。Ga:ZnO/i-ZnO-SiO2纳米复合材料/p-GaN n-i-p异质结构LED在376和427 nm处的EL发射峰分别归因于ZnO团簇的辐射复合和p-GaN层中的Mg受主能级。
