Long Hao, Li Songzhan, Mo Xiaoming, Wang Haoning, Chen Zhao, Feng Zhe Chuan, Fang Guojia
Opt Express. 2014 May 5;22 Suppl 3:A833-41. doi: 10.1364/OE.22.00A833.
ZnO/GaN-based light-emitting diodes (LEDs) with improved asymmetric double heterostructure of Ta₂O₅/ZnO/HfO₂ have been fabricated. Electroluminescence (EL) performance has been enhanced by the HfO₂ electron blocking layer and further improved by continuing inserting the Ta₂O₅ hole blocking layer. The origins of the emission have been identified, which indicated that the Ta₂O₅/ZnO/HfO₂ asymmetric structure could more effectively confine carriers in the active i-ZnO layer and meanwhile suppresses of radiation from GaN. This device exhibits superior stability in long-time running. It's hoped that the asymmetric double heterostructure may be helpful for the development of the future ZnO-based LEDs.
已制备出具有改进的Ta₂O₅/ZnO/HfO₂不对称双异质结构的ZnO/GaN基发光二极管（LED）。通过HfO₂电子阻挡层提高了电致发光（EL）性能，并通过继续插入Ta₂O₅空穴阻挡层进一步改善了该性能。已确定了发射的起源，这表明Ta₂O₅/ZnO/HfO₂不对称结构可以更有效地将载流子限制在有源i-ZnO层中，同时抑制来自GaN的辐射。该器件在长时间运行中表现出卓越的稳定性。希望这种不对称双异质结构可能有助于未来基于ZnO的LED的发展。
