Chen Charlton J, Zheng Jiangjun, Gu Tingyi, McMillan James F, Yu Mingbin, Lo Guo-Qiang, Kwong Dim-Lee, Wong Chee Wei
Optical Nanostructures Laboratory, Columbia University, New York 10027, USA.
Opt Express. 2011 Jun 20;19(13):12480-9. doi: 10.1364/OE.19.012480.
We examine the cavity resonance tuning of high-Q silicon photonic crystal heterostructures by localized laser-assisted thermal oxidation using a 532 nm continuous wave laser focused to a 2.5 μm radius spot-size. The total shift is consistent with the parabolic rate law. A tuning range of up to 8.7 nm is achieved with ∼ 30 mW laser powers. Over this tuning range, the cavity Qs decreases from 3.2×10(5) to 1.2×10(5). Numerical simulations model the temperature distributions in the silicon photonic crystal membrane and the cavity resonance shift from oxidation.
我们通过使用聚焦到半径为2.5μm光斑尺寸的532nm连续波激光进行局部激光辅助热氧化，研究了高Q值硅光子晶体异质结构的腔共振调谐。总位移与抛物线速率定律一致。在约30mW的激光功率下实现了高达8.7nm的调谐范围。在该调谐范围内，腔品质因数从3.2×10⁵降至1.2×10⁵。数值模拟对硅光子晶体膜中的温度分布以及氧化引起的腔共振位移进行了建模。
