Kim G M, Kovalgin A, Holleman J, Brugger J
Institute of Microelectronics and Microsystems, Ecole Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland.
J Nanosci Nanotechnol. 2002 Feb;2(1):55-9. doi: 10.1166/jnn.2002.073.
A means of accurate control of the curvature radius of molds that are used in nanostructure replication techniques is presented. The local non-uniform growth of SiO2 at regions with high curvature is used to fabricate molds with a curvature radius ranging anywhere between 10 and 250 nm. The mold radius is predicted by numerical simulation as a function of oxidation temperature and time and confirmed by a series of oxidation and etching experiments. The silicon, silicon dioxide, and polymer nanostructures are analyzed by scanning electron microscopy and compared with the theory. Replication into photo-plastic polymer from various sharp and round molds is performed, and their properties are discussed. Our results are useful for designing nanostructures in the area of soft lithography and nanoprobe engineering.
本文提出了一种精确控制用于纳米结构复制技术的模具曲率半径的方法。利用SiO₂在高曲率区域的局部非均匀生长来制造曲率半径在10至250nm之间的任意值的模具。通过数值模拟预测模具半径与氧化温度和时间的函数关系，并通过一系列氧化和蚀刻实验进行了验证。通过扫描电子显微镜对硅、二氧化硅和聚合物纳米结构进行了分析，并与理论进行了比较。进行了从各种尖锐和圆形模具复制到光塑性聚合物中的实验，并讨论了它们的性能。我们的结果对于软光刻和纳米探针工程领域的纳米结构设计很有用。
