Department of Chemistry and Physics, Mount Saint Vincent University, Halifax, Nova Scotia, Canada B3M 2J6.
Phys Chem Chem Phys. 2011 Aug 14;13(30):13738-48. doi: 10.1039/c1cp20175a. Epub 2011 Jul 1.
Molecules can be exposed to strong local electric fields of the order of 10(8)-10(10) V m(-1) in the biological milieu. The effects of such fields on the rate constant (k) of a model reaction, the double-proton transfer reaction in the formic acid dimer (FAD), are investigated. The barrier heights and shapes are calculated in the absence and presence of several static homogenous external fields ranging from 5.14 × 10(8) to 5.14 × 10(9) V m(-1) using density functional theory (DFT/B3LYP) and second order Møller-Plesset perturbation theory (MP2) in conjunction with the 6-311++G(d,p) Pople basis set. Conventional transition state theory (CTST) followed by Wigner tunneling correction is then applied to estimate the rate constants at 25 °C. It is found that electric fields parallel to the long axis of the dimer (the line joining the two carbon atoms) lower the uncorrected barrier height, and hence increase the raw k. These fields also flatten the potential energy surface near the transition state region and, hence, decrease the multiplicative tunneling correction factor. The net result of these two opposing effects is that fields increase k(corrected) by a factor of ca. 3-4 (DFT-MP2, respectively) compared to the field-free k. Field strengths of ∼3 × 10(9) V m(-1) are found to be sufficient to double the tunneling-corrected double proton transfer rate constant at 25 °C. Field strengths of similar orders of magnitudes are encountered in the scanning tunneling microscope (STM), in the microenvironment of a DNA base-pair, in an enzyme active site, and in intense laser radiation fields. It is shown that the net (tunneling corrected) effect of the field on k can be closely fitted to an exponential relationship of the form k = aexp(bE), where a and b are constants and E the electric field strength.
分子在生物环境中可能会暴露于高达 10(8) 到 10(10) V m(-1) 的强局部电场中。本文研究了这种电场对甲酸二聚体(FAD)中双质子转移反应这一模型反应的速率常数(k)的影响。在不存在和存在几种静态均匀外场的情况下,使用密度泛函理论(DFT/B3LYP)和二级 Møller-Plesset 微扰理论(MP2),结合 6-311++G(d,p) 普朗克基组,计算了无场和有场时的势垒高度和形状。这些外场的范围从 5.14×10(8) 到 5.14×10(9) V m(-1)。然后应用传统过渡态理论(CTST)和维格纳隧穿修正来估计 25°C 时的速率常数。结果发现,与二聚体长轴(两个碳原子之间的连线)平行的电场会降低未经修正的势垒高度,从而增加原始的 k。这些场还会使过渡态区域附近的位能表面变平,从而降低乘法隧穿修正因子。这两个相反效应的净结果是,与无场 k 相比,电场会使(DFT-MP2)修正后的 k 增加约 3-4 倍。研究发现,在 25°C 时,场强约为 3×10(9) V m(-1),足以使隧穿修正后的双质子转移速率常数翻倍。在扫描隧道显微镜(STM)、DNA 碱基对的微环境、酶活性位点和强激光辐射场中,都能遇到类似量级的场强。结果表明,电场对 k 的净(隧穿修正)效应可以很好地拟合为 k=aexp(bE)的指数关系,其中 a 和 b 是常数,E 是电场强度。