Sidorov Anton N, Yazdanpanah Mehdi M, Jalilian Romaneh, Ouseph P J, Cohn R W, Sumanasekera G U
ElectroOptics Research Institute and Nanotechnology Center, University of Louisville, Louisville, Kentucky, USA.
Nanotechnology. 2007 Apr 4;18(13):135301. doi: 10.1088/0957-4484/18/13/135301. Epub 2007 Feb 28.
Loose graphene sheets, one to a few atomic layers thick, are often observed on freshly cleaved HOPG surfaces. A straightforward technique using electrostatic attraction is demonstrated to transfer these graphene sheets to a selected substrate. Sheets from one to 22 layers thick have been transferred by this method. One sheet after initial deposition is measured by atomic force microscopy to be only an atomic layer thick (∼0.35 nm). A few weeks later, this height is seen to increase to ∼0.8 nm. Raman spectroscopy of a single layer sheet shows the emergence of an intense D band which dramatically decreases as the number of layers in the sheet increase. The intense D band in monolayer graphene is attributed to the graphene conforming to the roughness of the substrate. The disruption of the C-C bonds within the single graphene layer could also contribute to this intense D band as evidenced by the emergence of a new band at 1620 cm(-1).
在新解理的高定向热解石墨（HOPG）表面常常能观察到厚度为一至几个原子层的松散石墨烯片。本文展示了一种利用静电吸引的简单技术，可将这些石墨烯片转移至选定的基底上。通过该方法已成功转移了厚度从一层到22层的石墨烯片。初始沉积后的单层石墨烯片经原子力显微镜测量，其厚度仅为一个原子层厚（约0.35纳米）。几周后，该高度增加至约0.8纳米。单层石墨烯片的拉曼光谱显示出现了一个强D带，随着石墨烯片层数的增加，该D带显著减弱。单层石墨烯中的强D带归因于石墨烯与基底粗糙度的适配。单石墨烯层内C - C键的破坏也可能导致了这个强D带，这一点可由在1620厘米⁻¹处出现的新谱带来证明。
