Karan Santanu, Mallik Biswanath
Department of Spectroscopy, Indian Association for the Cultivation of Science, 2A & 2B, Raja S C Mullick Road, Jadavpur, Kolkata-700 032, India.
Nanotechnology. 2008 Dec 10;19(49):495202. doi: 10.1088/0957-4484/19/49/495202. Epub 2008 Nov 18.
High quality organic-inorganic heterojunction photodiodes based on nanostructured copper (II) phthalocyanine (CuPc) and intrinsic zinc oxide (i-ZnO) have been fabricated. The i-ZnO thin films/layers were grown by RF magnetron sputtering on clean indium tin oxide (ITO) coated glass substrates. These films have been characterized by optical absorption and field emission scanning electron microscopy (FESEM). CuPc thin films deposited at room temperature on i-ZnO have exhibited a change in their surface morphology with the post-deposition annealing temperature under normal atmosphere. The electrical dark conductivity and the photoconductivity of ITO/i-ZnO/CuPc/Au sandwich structures have been measured under various photoexcitation intensities using a xenon light source. The devices have shown excellent reproducibility of their electrical characteristics and high rectification ratios. The highest rectification ratio is nearly 831 calculated above the threshold voltage at room temperature for the sample annealed at 250 °C (i.e. Pc 250). The effects of the annealing temperature of CuPc on the surface morphology, rectification ratio, and optical properties have been discussed.
基于纳米结构的铜（II）酞菁（CuPc）和本征氧化锌（i-ZnO）制备了高质量的有机-无机异质结光电二极管。通过射频磁控溅射在清洁的氧化铟锡（ITO）涂层玻璃基板上生长i-ZnO薄膜/层。这些薄膜通过光吸收和场发射扫描电子显微镜（FESEM）进行了表征。在室温下沉积在i-ZnO上的CuPc薄膜在正常气氛下随着沉积后退火温度的变化其表面形态也发生了变化。使用氙光源在各种光激发强度下测量了ITO/i-ZnO/CuPc/Au三明治结构的暗电导率和光电导率。这些器件的电学特性具有出色的可重复性和高整流比。对于在250°C退火的样品（即Pc 250），在室温下高于阈值电压计算出的最高整流比接近831。讨论了CuPc退火温度对表面形态、整流比和光学性能的影响。
