通过等离子体增强化学气相沉积在低衬底温度下选择性生长氮化硼纳米管。

Selective growth of boron nitride nanotubes by plasma-enhanced chemical vapor deposition at low substrate temperature.

作者信息

Guo L, Singh R N

机构信息

Department of Chemical and Materials Engineering, University of Cincinnati, Cincinnati, OH 45221-0012, USA.

出版信息

Nanotechnology. 2008 Feb 13;19(6):065601. doi: 10.1088/0957-4484/19/6/065601. Epub 2008 Jan 23.

DOI:10.1088/0957-4484/19/6/065601

PMID:21730699

Abstract

Hexagonal boron nitride nanotubes (BNNTs) were synthesized at a low substrate temperature of 800 °C on nickel (Ni) coated oxidized Si(111) wafers in a microwave plasma-enhanced chemical vapor deposition system (MPCVD) by decomposition and reaction of gas mixtures consisting of B(2)H(6)-NH(3)-H(2). The 1D BN nanostructures grew preferentially on Ni catalyst islands with a small thickness only. In situ mass spectroscopic analysis and optical emission spectroscopy were used to identify the gas reactions responsible for the BNNT formation. The morphology and structural properties of the deposits were analyzed by SEM, TEM, EDX, SAD and Raman spectroscopy. The growth mechanism of the BNNTs was identified.

摘要

在微波等离子体增强化学气相沉积系统（MPCVD）中，通过由B₂H₆-NH₃-H₂组成的气体混合物的分解和反应，在800 °C的低衬底温度下，在涂有镍（Ni）的氧化Si(111)晶片上合成了六方氮化硼纳米管（BNNTs）。一维BN纳米结构仅在厚度较小的Ni催化剂岛优先生长。利用原位质谱分析和光发射光谱来确定负责BNNT形成的气体反应。通过扫描电子显微镜（SEM）、透射电子显微镜（TEM）、能量色散X射线光谱（EDX）、选区电子衍射（SAD）和拉曼光谱对沉积物的形貌和结构性质进行了分析。确定了BNNTs的生长机制。