通过热化学气相沉积法实现氮化硼纳米管的有效生长。
Effective growth of boron nitride nanotubes by thermal chemical vapor deposition.
作者信息
Lee Chee Huei, Wang Jiesheng, Kayatsha Vijaya K, Huang Jian Y, Yap Yoke Khin
机构信息
Department of Physics, Michigan Technological University, 1400 Townsend Drive, Houghton, MI 49931, USA.
出版信息
Nanotechnology. 2008 Nov 12;19(45):455605. doi: 10.1088/0957-4484/19/45/455605. Epub 2008 Oct 9.
Effective growth of multiwalled boron nitride nanotubes (BNNTs) has been obtained by thermal chemical vapor deposition (CVD). This is achieved by a growth vapor trapping approach as guided by the theory of nucleation. Our results enable the growth of BNNTs in a conventional horizontal tube furnace within an hour at 1200 °C. We found that these BNNTs have an absorption band edge of 5.9 eV, approaching that of single h-BN crystals, which are promising for future nanoscale deep-UV light emitting devices.
通过热化学气相沉积（CVD）已实现了多壁氮化硼纳米管（BNNTs）的有效生长。这是通过成核理论指导的生长气相捕获方法实现的。我们的结果使得能够在传统的卧式管式炉中于1200°C下在一小时内生长BNNTs。我们发现这些BNNTs的吸收带边缘为5.9 eV，接近单h-BN晶体的吸收带边缘，这对于未来的纳米级深紫外发光器件很有前景。
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