Khokhar Ali Z, Parsons Keith, Hubbard Graham, Watson Ian M, Rahman Faiz, Macintyre Douglas S, Xiong Chang, Massoubre David, Gong Zheng, Gu Erdan, Johnson Nigel P, De La Rue Richard M, Dawson Martin D, Abbott Steve J, Charlton Martin D B, Tillin Martin
Department of Electronics and Electrical Engineering, University of Glasgow, Oakfield Avenue, Rankine Building, Glasgow G12 8LT, United Kingdom.
Appl Opt. 2011 Jul 1;50(19):3233-9. doi: 10.1364/AO.50.003233.
Experimentally measured optical properties of photonic crystal LEDs are reported here. Photonic crystal and photonic quasi-crystal structures were fabricated on GaN epilayer LED wafer material using both direct-write electron beam lithography and nanoimprint lithography. Some of these structures were processed to make finished LEDs. Both electroluminescence and photoluminescence measurements were performed on these structures. Devices were characterized for their current-voltage characteristics, emission spectra, far-field emission pattern, and angular emission pattern. These results are useful for fabricating photonic crystal LEDs and assessing their operational properties.
本文报道了光子晶体发光二极管的实验测量光学特性。利用直写电子束光刻和纳米压印光刻技术，在氮化镓外延层发光二极管晶圆材料上制备了光子晶体和光子准晶体结构。其中一些结构被加工制成成品发光二极管。对这些结构进行了电致发光和光致发光测量。对器件的电流-电压特性、发射光谱、远场发射图案和角发射图案进行了表征。这些结果对于制造光子晶体发光二极管及其性能评估具有重要意义。
