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基于氧化锌纳米棒的光子器件:生长、发光二极管及激光器方面的最新进展

Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers.

作者信息

Willander M, Nur O, Zhao Q X, Yang L L, Lorenz M, Cao B Q, Zúñiga Pérez J, Czekalla C, Zimmermann G, Grundmann M, Bakin A, Behrends A, Al-Suleiman M, El-Shaer A, Che Mofor A, Postels B, Waag A, Boukos N, Travlos A, Kwack H S, Guinard J, Le Si Dang D

机构信息

Department of Science and Technology, Linköping University, SE-60174 Norrköping, Sweden.

出版信息

Nanotechnology. 2009 Aug 19;20(33):332001. doi: 10.1088/0957-4484/20/33/332001. Epub 2009 Jul 28.

Abstract

Zinc oxide (ZnO), with its excellent luminescent properties and the ease of growth of its nanostructures, holds promise for the development of photonic devices. The recent advances in growth of ZnO nanorods are discussed. Results from both low temperature and high temperature growth approaches are presented. The techniques which are presented include metal-organic chemical vapour deposition (MOCVD), vapour phase epitaxy (VPE), pulse laser deposition (PLD), vapour-liquid-solid (VLS), aqueous chemical growth (ACG) and finally the electrodeposition technique as an example of a selective growth approach. Results from structural as well as optical properties of a variety of ZnO nanorods are shown and analysed using different techniques, including high resolution transmission electron microscopy (HR-TEM), scanning electron microscopy (SEM), photoluminescence (PL) and cathodoluminescence (CL), for both room temperature and for low temperature performance. These results indicate that the grown ZnO nanorods possess reproducible and interesting optical properties. Results on obtaining p-type doping in ZnO micro- and nanorods are also demonstrated using PLD. Three independent indications were found for p-type conducting, phosphorus-doped ZnO nanorods: first, acceptor-related CL peaks, second, opposite transfer characteristics of back-gate field effect transistors using undoped and phosphorus doped wire channels, and finally, rectifying I-V characteristics of ZnO:P nanowire/ZnO:Ga p-n junctions. Then light emitting diodes (LEDs) based on n-ZnO nanorods combined with different technologies (hybrid technologies) are suggested and the recent electrical, as well as electro-optical, characteristics of these LEDs are shown and discussed. The hybrid LEDs reviewed and discussed here are mainly presented for two groups: those based on n-ZnO nanorods and p-type crystalline substrates, and those based on n-ZnO nanorods and p-type amorphous substrates. Promising electroluminescence characteristics aimed at the development of white LEDs are demonstrated. Although some of the presented LEDs show visible emission for applied biases in excess of 10 V, optimized structures are expected to provide the same emission at much lower voltage. Finally, lasing from ZnO nanorods is briefly reviewed. An example of a recent whispering gallery mode (WGM) lasing from ZnO is demonstrated as a way to enhance the stimulated emission from small size structures.

摘要

氧化锌(ZnO)具有优异的发光特性且其纳米结构易于生长,在光子器件开发方面具有潜力。本文讨论了ZnO纳米棒生长的最新进展。展示了低温和高温生长方法的结果。所介绍的技术包括金属有机化学气相沉积(MOCVD)、气相外延(VPE)、脉冲激光沉积(PLD)、气液固(VLS)、水相化学生长(ACG),最后以电沉积技术作为选择性生长方法的示例。使用不同技术(包括高分辨率透射电子显微镜(HR-TEM)、扫描电子显微镜(SEM)、光致发光(PL)和阴极发光(CL))展示并分析了各种ZnO纳米棒的结构和光学性质,涵盖室温及低温性能。这些结果表明,生长的ZnO纳米棒具有可重复且有趣的光学性质。还展示了使用PLD在ZnO微米和纳米棒中实现p型掺杂的结果。在磷掺杂的ZnO纳米棒中发现了三个独立的p型导电迹象:第一,与受主相关的CL峰;第二,使用未掺杂和磷掺杂线通道的背栅场效应晶体管的相反转移特性;第三,ZnO:P纳米线/ZnO:Ga p-n结的整流I-V特性。然后提出了基于n-ZnO纳米棒与不同技术(混合技术)结合的发光二极管(LED),并展示和讨论了这些LED最近的电学以及电光特性。这里回顾和讨论的混合LED主要分为两组:基于n-ZnO纳米棒和p型晶体衬底的,以及基于n-ZnO纳米棒和p型非晶衬底的。展示了旨在开发白光LED的有前景的电致发光特性。尽管一些展示的LED在超过10 V的施加偏压下显示出可见发射,但预计优化结构将在低得多的电压下提供相同的发射。最后,简要回顾了ZnO纳米棒的激光发射。展示了最近一个来自ZnO的回音壁模式(WGM)激光发射的示例,作为增强小尺寸结构受激发射的一种方式。

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