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基于InGaAs/AlAsSb耦合双量子阱中的子带间跃迁的单片集成全光门开关

Monolithically integrated all-optical gate switch using intersubband transition in InGaAs/AlAsSb coupled double quantum wells.

作者信息

Akimoto Ryoichi, Gozu Shin-ichiro, Mozume Teruo, Ishikawa Hiroshi

机构信息

Network Photonics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan.

出版信息

Opt Express. 2011 Jul 4;19(14):13386-94. doi: 10.1364/OE.19.013386.

DOI:10.1364/OE.19.013386
PMID:21747494
Abstract

We have developed a compact all-optical gate switch with a footprint less than 1 mm2, in which an optical nonlinear waveguide using cross-phase-modulation associated with intersubband transition in InGaAs/AlGaAs/AlAsSb coupled double quantum wells and a Michelson interferometer (MI) are monolithically integrated on an InP chip. The MI configuration allows a transverse magnetic pump light direct access to an MI arm for phase modulation while passive photonic integrated circuits serve a transverse electric signal light. Full switching of the π-rad nonlinear phase shift is achieved with a pump pulse energy of 8.6 pJ at a 10-GHz repetition rate. We also demonstrate all-optical demultiplexing of a 160-Gb/s signal to a 40-Gb/s signal.

摘要

我们已经开发出一种占地面积小于1平方毫米的紧凑型全光门开关,其中,一个利用与InGaAs/AlGaAs/AlAsSb耦合双量子阱中的子带间跃迁相关的交叉相位调制的光学非线性波导和一个迈克尔逊干涉仪(MI)被单片集成在一个InP芯片上。MI配置允许横向磁泵浦光直接进入MI臂进行相位调制,而无源光子集成电路则用于横向电信号光。在10吉赫兹的重复频率下,用8.6皮焦的泵浦脉冲能量实现了π弧度非线性相移的完全切换。我们还演示了将160吉比特/秒的信号全光解复用为40吉比特/秒的信号。

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