Jain Siddharth R, Sysak Matthew N, Kurczveil Geza, Bowers John E
Department of Electrical Engineering, University of California, Santa Barbara, California 93106, USA.
Opt Express. 2011 Jul 4;19(14):13692-9. doi: 10.1364/OE.19.013692.
We demonstrate multiple bandgap integration on the hybrid silicon platform using quantum well intermixing. A broadband DFB laser array and a DFB-EAM array are realized on a single chip using four bandgaps defined by ion implantation enhanced disordering. The broadband laser array uses two bandgaps with 17 nm blue shift to compensate for gain roll-off while the integrated DFB-EAMs use the as-grown bandgap for optical gain and a 30 nm blue shifted bandgap for modulation. The multi-channel DFB array includes 13 lasers with >90 nm gain-bandwidth. The transponder includes four DFB-EAMs with 14 dB DC extinction at 4 V bias.
我们利用量子阱互混技术在混合硅平台上实现了多带隙集成。通过离子注入增强无序化定义的四个带隙，在单个芯片上实现了宽带分布反馈（DFB）激光器阵列和DFB电吸收调制器（EAM）阵列。宽带激光器阵列使用两个蓝移17 nm的带隙来补偿增益滚降，而集成的DFB-EAM则使用生长态带隙进行光增益，并使用蓝移30 nm的带隙进行调制。多通道DFB阵列包括13个增益带宽大于90 nm的激光器。该转发器包括四个在4 V偏置下具有14 dB直流消光比的DFB-EAM。
