Wang Yadong, Wei Yongqiang, Huang Yingyan, Tu Yongming, Ng Doris, Lee Cheewei, Zheng Yunan, Liu Boyang, Ho Seng-Tiong
Data Storage Institute, 5 Engineering Drive 1, Singapore 117608, Singapore.
Opt Express. 2011 Jan 31;19(3):2006-13. doi: 10.1364/OE.19.002006.
We have demonstrated a heterogeneously integrated III-V-on-Silicon laser based on an ultra-large-angle super-compact grating (SCG). The SCG enables single-wavelength operation due to its high-spectral-resolution aberration-free design, enabling wavelength division multiplexing (WDM) applications in Electronic-Photonic Integrated Circuits (EPICs). The SCG based Si/III-V laser is realized by fabricating the SCG on silicon-on-insulator (SOI) substrate. Optical gain is provided by electrically pumped heterogeneous integrated III-V material on silicon. Single-wavelength lasing at 1550 nm with an output power of over 2 mW and a lasing threshold of around 150 mA were achieved.
我们展示了一种基于超大角度超紧凑型光栅（SCG）的异质集成硅基III-V族激光器。由于其高光谱分辨率、无像差设计，该SCG能够实现单波长工作，从而在电子-光子集成电路（EPIC）中实现波分复用（WDM）应用。基于SCG的硅/III-V族激光器是通过在绝缘体上硅（SOI）衬底上制造SCG来实现的。光增益由硅上的电泵浦异质集成III-V族材料提供。实现了在1550 nm处的单波长激光发射，输出功率超过2 mW，激光阈值约为150 mA。
