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通过电子束轰击增强碳纳米管与氧化锌四足体复合发射体的场发射。

Enhanced field emission from compound emitters of carbon nanotubes and ZnO tetrapods by electron beam bombardment.

作者信息

Wei Lei, Zhang Xiaobing, Lou Chaogang, Zhao Zhiwei, Jing Chen, Wang Baoping

机构信息

School of Electronic Science and Engineering, Southeast University, Nanjing 210096, PR China.

出版信息

J Nanosci Nanotechnol. 2011 Jun;11(6):4968-73. doi: 10.1166/jnn.2011.4180.

DOI:10.1166/jnn.2011.4180
PMID:21770129
Abstract

The enhancement of field emission from compound emitters of carbon nanotubes and ZnO tetrapods by the electron beam bombardment is reported. After 20 minutes electron bombardment with 6 keV energy, a few bird-nest micro structures are formed in the compound emitters array. As the simulation results shown, the electric field and field emission current density at the tip of ZnO tetrapod are increased due to the influences of these bird-nest micro structures. From the measurement of the field emission performance, it can be seen that the turn-on electric field and threshold electric field of the field emitter array decrease to 0.4 V/microm and 2.4 V/microm respectively. They have decreased 62% and 15% after the electron bombardment. After the electron bombardment, the emission sites density is increased. The field emission images show that the uniformity of field emission has been improved obviously after the proper electron bombardment. The methodology proposed in this paper has a promising application in the field emission devices.

摘要

据报道,通过电子束轰击可增强碳纳米管和氧化锌四足体复合发射体的场发射。在6 keV能量下进行20分钟的电子轰击后,复合发射体阵列中形成了一些鸟巢状微结构。如模拟结果所示,由于这些鸟巢状微结构的影响,氧化锌四足体尖端的电场和场发射电流密度增加。从场发射性能的测量结果可以看出,场发射体阵列的开启电场和阈值电场分别降至0.4 V/μm和2.4 V/μm。电子轰击后它们分别下降了62%和15%。电子轰击后,发射位点密度增加。场发射图像表明,适当的电子轰击后场发射的均匀性得到了明显改善。本文提出的方法在场发射器件领域具有广阔的应用前景。

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