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填充β-碳化硅纳米颗粒的聚偏二氟乙烯的结构和电学特性

Structure and electrical characteristics of poly(vinylidene fluoride) filled with beta silicon carbide nanoparticles.

作者信息

Li Yuchao, Tjong Sie Chin

机构信息

Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong.

出版信息

J Nanosci Nanotechnol. 2011 Jun;11(6):5148-53. doi: 10.1166/jnn.2011.4153.

DOI:10.1166/jnn.2011.4153
PMID:21770157
Abstract

Poly(vinylidene fluoride) based composites filled with semiconducting beta silicon carbide (beta-SiC) nanoparticles were prepared by means of solution mixing method. The dielectric responses of PVDF/beta-SiC nanocomposites over a wide frequency range were investigated. The results showed that the permittivity of composites increases with increasing filler content. A large permittivity of 610 together with a low loss tangent of 1.0 was achieved in the PVDF/SiC 50 wt% system. The composites exhibit dielectric relaxation process in the tested frequency range and such relaxation can be well described by the Cole-Cole equation.

摘要

通过溶液混合法制备了填充有半导体β碳化硅(β-SiC)纳米颗粒的聚偏氟乙烯基复合材料。研究了PVDF/β-SiC纳米复合材料在很宽频率范围内的介电响应。结果表明,复合材料的介电常数随填料含量的增加而增大。在PVDF/SiC 50 wt%体系中实现了610的大介电常数和1.0的低损耗角正切。复合材料在测试频率范围内表现出介电弛豫过程,这种弛豫可以用Cole-Cole方程很好地描述。

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引用本文的文献

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