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电场诱导半导体中的光相干控制:弗朗兹-克耳德什效应的一种新表现。

Optical coherent control induced by an electric field in a semiconductor: a new manifestation of the Franz-Keldysh effect.

机构信息

JILA, National Institute of Standards and Technology, and the University of Colorado, Boulder, Colorado 80309, USA.

出版信息

Phys Rev Lett. 2011 Jun 17;106(24):247404. doi: 10.1103/PhysRevLett.106.247404.

Abstract

In (100)-oriented GaAs illuminated at normal incidence by a laser and its second harmonic, interference between one- and two-photon absorption results in ballistic current injection, but not modulation of the overall carrier injection rate. Results from a pump-probe experiment on a transversely biased sample show that a constant electric field enables coherent control of the carrier injection rate. We ascribe this to the nonlinear optical Franz-Keldysh effect and calculate it for a two-band parabolic model. The mechanism is relevant to centrosymmetric semiconductors as well.

摘要

在激光及其二次谐波垂直入射下,(100)取向 GaAs 中的单光子和双光子吸收之间的干涉导致弹道电流注入,但不调制整体载流子注入速率。在横向偏置样品上进行的泵浦探测实验的结果表明,恒定电场能够实现对载流子注入速率的相干控制。我们将其归因于非线性光学 Franz-Keldysh 效应,并针对双带抛物模型进行了计算。该机制也与中心对称半导体相关。

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