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半导体量子线中的高场弗朗兹-凯尔迪什效应与激子电离

High-field franz-keldysh effect and exciton ionization in semiconductor quantum wires.

作者信息

Hughes S, Citrin DS

机构信息

Department of Physics, University of Surrey, Guildford, Surrey GU2 5XH, United Kingdom.

出版信息

Phys Rev Lett. 2000 May 1;84(18):4228-31. doi: 10.1103/PhysRevLett.84.4228.

Abstract

We investigate the Franz-Keldysh effect and exciton ionization in semiconductor quantum wires. Absorption spectra are calculated near the band gap by solution of the low-density semiconductor Bloch equations in real space. The Sommerfeld factor and field-induced tunnel ionization of the exciton significantly affect the continuum portion of the absorption spectrum and remove the well known divergence problem associated with the 1D density of states at all field strengths. For reasonable electric field strengths substantial and tunable absorption oscillations appear above the band gap. Moreover, for very large fields, transparency can be achieved in the continuum for certain spectral positions.

摘要

我们研究了半导体量子线中的弗朗兹-凯尔迪什效应和激子电离。通过求解实空间中的低密度半导体布洛赫方程,计算了带隙附近的吸收光谱。激子的索末菲因子和场致隧道电离显著影响吸收光谱的连续部分,并消除了在所有场强下与一维态密度相关的众所周知的发散问题。对于合理的电场强度,在带隙之上会出现大量且可调谐的吸收振荡。此外,对于非常大的场强,在连续谱的某些光谱位置可以实现透明。

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