Krupka Jerzy, Strupinski Wlodek, Kwietniewski Norbert
Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland.
J Nanosci Nanotechnol. 2011 Apr;11(4):3358-62. doi: 10.1166/jnn.2011.3728.
The surface resistance of Ag, Au and A1 thin conducting films deposited on low loss dielectric substrates at microwave frequencies using TE011 mode single post-dielectric resonator (10-13.22 GHz) was measured to calculate their conductivity in relation to layers thickness. This method enabling measurements near metal-insulator percolation transition was also applied for epitaxial graphene deposited on semi-insulating SiC. Moreover, effective microwave conductivity has been determined for intentionally made aluminum island structure where the DC conductivity is equal to zero. Special attention was paid to films thickness measurements which is critical for accuracy of sheet resistance calculation. Conductivity of thin metal layers and very thin graphene was compared.
使用TE011模式单柱介质谐振器（10 - 13.22 GHz）测量了在微波频率下沉积在低损耗介质基板上的银、金和铝薄导电膜的表面电阻，以计算它们相对于层厚度的电导率。这种能够在金属 - 绝缘体渗流转变附近进行测量的方法也应用于沉积在半绝缘碳化硅上的外延石墨烯。此外，还测定了直流电导率等于零的有意制备的铝岛结构的有效微波电导率。特别关注了薄膜厚度测量，这对于薄层电阻计算的准确性至关重要。比较了薄金属层和极薄石墨烯的电导率。
