Tyagi Pawan K, Janowska Izabela, Cretu Ovidu, Pham-Huu Cuong, Banhart Florian
Institut de Physique et Chimie des Matériaux, UMR 7504, CNRS, Université de Strasbourg, 23 rue du Loess, 67034 Strasbourg, France.
J Nanosci Nanotechnol. 2011 Apr;11(4):3609-15. doi: 10.1166/jnn.2011.3740.
Multi-wall carbon nanotubes are grown in a chemical vapor deposition process by using bulk gold and copper substrates as catalysts. Nanotube growth starts from a nanometer-sized roughness on the metal surfaces and occurs in a mechanism where the catalyst particle is either at the tip (Au) or root (Cu) of the growing nanotube. Whereas Au leads to nanotubes with good structural perfection, nanotubes grown from Cu show a higher density of defects. High-resolution transmission electron microscopy shows the bonding between Au and carbon at the metal-nanotube interface whereas no bonds between Cu and carbon occur. Highly mobile Au or Cu atoms adsorb at the growing edge of a carbon nanotube from where diffusion along the nanotube wall can lead to the formation of Au or Cu nanowires inside the central hollow of carbon nanotubes.
多壁碳纳米管是在化学气相沉积过程中，以块状金和铜基板作为催化剂生长而成的。纳米管的生长始于金属表面纳米级的粗糙度，其生长机制是催化剂颗粒位于生长中的纳米管的尖端（金）或根部（铜）。金会生成结构完美的纳米管，而由铜生长出的纳米管则显示出更高的缺陷密度。高分辨率透射电子显微镜显示了金属 - 纳米管界面处金与碳之间的键合，而铜与碳之间不形成键。高度可移动的金或铜原子吸附在碳纳米管的生长边缘，从那里沿着纳米管壁扩散会导致在碳纳米管中心空洞内形成金或铜纳米线。
