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通过纳米压印光刻技术制备用于检测β-淀粉样蛋白(1-42)的硅纳米线

Fabrication of silicon nanowire for detecting p-amyloid (1-42) by nanoimprint lithography.

作者信息

Choi Dong-Sik, Lee Jin-Ho, Jung Hee-Soo, Jung Gun-Young, Choi Jae-Hak, Choi Jeong-Woo, Oh Byung-Keun

机构信息

Interdisciplinary Program of Integrated Biotechnology, Sogang University, #1 Shinsu-Dong, Mapo-Gu, Seoul 121-742, Korea.

出版信息

J Nanosci Nanotechnol. 2011 May;11(5):4517-21. doi: 10.1166/jnn.2011.3634.

DOI:10.1166/jnn.2011.3634
PMID:21780489
Abstract

Ultraviolet nanoimprint lithography (UV-NIL) is a high volume and cost-effective patterning technique with sub-10 nm resolution. It has great potential as a candidate for next generation lithography. Using UV-NIL, nanowire patterns were successfully fabricated on a four-inch silicon-on-insulator (SOI) wafer under moderate conditions. The fabricated nanowire patterns were characterized by FE-SEM. Its electrical properties were confirmed by semiconductor parameter analysis. Monoclonal antibodies against beta-amyloid (1-42) were immobilized on the silicon nanowire using a chemical linker. Using this fabricated silicon nanowire device, beta-amyloid (1-42) levels of 1 pM to 100 nM were successfully determined from conductance versus time characteristics. Consequently, the nanopatterned SOI nanowire device can be applied to bioplatforms for the detection of proteins.

摘要

紫外纳米压印光刻技术(UV-NIL)是一种具有小于10纳米分辨率的高产量且经济高效的图案化技术。作为下一代光刻技术的候选技术,它具有巨大潜力。利用UV-NIL,在中等条件下成功地在四英寸绝缘体上硅(SOI)晶圆上制备了纳米线图案。通过场发射扫描电子显微镜(FE-SEM)对制备的纳米线图案进行了表征。通过半导体参数分析证实了其电学性质。使用化学连接剂将抗β-淀粉样蛋白(1-42)单克隆抗体固定在硅纳米线上。利用这种制备的硅纳米线器件,根据电导与时间的特性成功测定了1皮摩尔至100纳摩尔的β-淀粉样蛋白(1-42)水平。因此,纳米图案化的SOI纳米线器件可应用于蛋白质检测的生物平台。

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引用本文的文献

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Hybrid Silicon Nanowire Devices and Their Functional Diversity.混合硅纳米线器件及其功能多样性
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