National Nano Device Laboratories, No. 26, Hsinchu Science Park, Hsinchu 300, Taiwan.
Sensors (Basel). 2012;12(4):3952-63. doi: 10.3390/s120403952. Epub 2012 Mar 26.
This paper reports a versatile nano-sensor technology using "top-down" poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process. The nanowire manufacturing technique reduced nanowire width scaling to 50 nm without use of extra lithography equipment, and exhibited superior device uniformity. These n type polysilicon nanowire FETs have positive pH sensitivity (100 mV/pH) and sensitive deoxyribonucleic acid (DNA) detection ability (100 pM) at normal system operation voltages. Specially designed oxide-nitride-oxide buried oxide nanowire realizes an electrically V(th)-adjustable sensor to compensate device variation. These nanowire FETs also enable non-volatile memory application for a large and steady V(th) adjustment window (>2 V Programming/Erasing window). The CMOS-compatible manufacturing technique of polysilicon nanowire FETs offers a possible solution for commercial System-on-Chip biosensor application, which enables portable physiology monitoring and in situ recording.
本文报道了一种通用的纳米传感器技术，该技术使用“自上而下”的多晶硅纳米线场效应晶体管（FET）在传统互补金属氧化物半导体（CMOS）兼容的半导体工艺中。纳米线制造技术将纳米线宽度缩小到 50nm，而无需额外的光刻设备，并且表现出优异的器件均匀性。这些 n 型多晶硅纳米线 FET 在正常系统工作电压下具有正 pH 灵敏度（100 mV/pH）和灵敏的脱氧核糖核酸（DNA）检测能力（100 pM）。专门设计的氧化硅-氮化硅-氧化硅埋氧层纳米线实现了电 Vth 可调传感器，以补偿器件变化。这些纳米线 FET 还可用于非易失性存储器应用，具有较大且稳定的 Vth 调节窗口（>2V 编程/擦除窗口）。多晶硅纳米线 FET 的 CMOS 兼容制造技术为商用片上系统生物传感器应用提供了一种可能的解决方案，可实现便携式生理监测和原位记录。
