Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
ACS Nano. 2011 Aug 23;5(8):6500-6. doi: 10.1021/nn201824h. Epub 2011 Jul 27.
This work demonstrates the processing and characterization of the transparent and highly electrically conductive film using few-walled carbon nanotubes (FWCNTs) decorated with Pd nanoparticles as fillers. The approach included functionalizing the FWCNTs, immersing them in an aqueous solution of palladate salts, and subsequently subjecting them to a reduction reaction in H(2). Field-emission scanning electron microscopy and transmission electron microscopy images showed that the functionalized FWCNTs (f-FWCNTs) were decorated with uniform and homogeneous Pd nanoparticles with an average diameter of 5 nm. A shift of the G-band to a higher frequency in the Raman spectra of the Pd-decorated f-FWCNTs (Pd@f-FWCNTs) illustrates that the p-type doping effect was enhanced. X-ray photoelectron spectroscopy and energy-dispersive X-ray spectroscopy showed that PdCl(2) was the primary decoration compound on the f-FWCNTs prior to the reduction reaction and that Pd nanoparticles were the only decorated nanoparticles after H(2) reduction. The contact resistance between the metallic materials and the semiconducting CNTs in FWCNTs, controlled by the Schottky barrier, was significantly decreased compared to the pristine FWCNTs. The decrease in contact resistance is attributed to the 0.26 eV increase of the work function of the Pd@f-FWCNTs. Extremely low sheet resistance of 274 ohm/sq of the poly(ethylene terephthalate) substrates coated with Pd@f-FWCNTs was attained, which was 1/25 the resistance exhibited by those coated with FWCNTs, whereas the same optical transmittance of 81.65% at a wavelength of 550 nm was maintained.
这项工作展示了使用钯纳米粒子修饰的少壁碳纳米管(FWCNT)作为填充物来制备透明且高导电的薄膜的处理和特性。该方法包括对 FWCNT 进行功能化,将其浸入钯酸盐的水溶液中,然后在 H2 中进行还原反应。场发射扫描电子显微镜和透射电子显微镜图像显示,功能化的 FWCNT(f-FWCNT)被均匀且均匀的 5nm 平均直径的 Pd 纳米粒子所修饰。Pd 修饰的 f-FWCNT(Pd@f-FWCNT)的拉曼光谱中 G 带向更高频率的位移表明 p 型掺杂效应得到增强。X 射线光电子能谱和能量色散 X 射线能谱表明,在还原反应之前,f-FWCNT 上的主要修饰化合物是 PdCl2,而在 H2 还原之后,只有 Pd 纳米粒子被修饰。与原始 FWCNT 相比,FWCNT 中的金属材料和半导体 CNT 之间的接触电阻通过肖特基势垒得到了显著降低。接触电阻的降低归因于 Pd@f-FWCNT 的功函数增加了 0.26eV。涂覆有 Pd@f-FWCNT 的聚对苯二甲酸乙二醇酯(PET)基底的方阻低至 274 欧姆/平方,仅为涂覆有 FWCNT 的基底的 1/25,而在 550nm 波长下,其透光率仍保持在 81.65%。