Maitani Masato M, Allara David L
Department of Applied Chemistry, Tokyo Institute of Technology, Tokyo, Japan.
Top Curr Chem. 2012;312:239-73. doi: 10.1007/128_2011_177.
Metal vapor deposition to form ohmic contacts is commonly used in the fabrication of organic electronic devices because of significant manufacturability advantages. In the case of single molecular layer devices, however, the extremely small thickness, typically ~1-2nm, presents serious challenges in achieving good contacts and device integrity. This review focuses on recent scientific aspects of metal vapor deposition on monolayer thickness molecular films, particularly self-assembled monolayers, ranging across mechanisms of metal nucleation, metal-molecular group interactions and chemical reactions, diffusion of metal atoms within and through organic films, and the correlations of these and other factors with device function. Results for both non-reactive and reactive metal deposition are reviewed. Finally, novel strategies are considered which show promise for providing highly reliable and durable metal/organic top contacts for use in metal-molecule-metal junctions for device applications.
由于具有显著的可制造性优势，金属气相沉积形成欧姆接触在有机电子器件制造中被广泛使用。然而，对于单分子层器件而言，其极小的厚度（通常约为1-2纳米）在实现良好接触和器件完整性方面带来了严峻挑战。本综述聚焦于在单层厚度分子膜（特别是自组装单分子层）上进行金属气相沉积的近期科学研究，涵盖金属成核机制、金属-分子基团相互作用及化学反应、金属原子在有机膜内及穿过有机膜的扩散，以及这些因素和其他因素与器件功能的相关性。文中对非反应性和反应性金属沉积的结果均进行了综述。最后，探讨了一些新颖策略，这些策略有望为用于器件应用的金属-分子-金属结提供高度可靠且耐用的金属/有机顶部接触。
