Department of Materials Science and Engineering, The Ohio State University, 2041 College Road, Columbus, Ohio 43210, United States.
Nano Lett. 2011 Nov 9;11(11):4725-9. doi: 10.1021/nl202495k. Epub 2011 Oct 18.
Diffusion of metal atoms onto a molecular monolayer attached to a conducting surface permits electronic contact to the molecules with minimal heat transfer or structural disturbance. Surface-mediated metal deposition (SDMD) involves contact between "cold" diffusing metal atoms and molecules, due to shielding of the molecules from direct exposure to metal vapor. Measurement of the current through the molecular layer during metal diffusion permits observation of molecular conductance for junctions containing as few as one molecule. Discrete conductance steps were observed for 1-10 molecules within a monolayer during a single deposition run, corresponding to "recruitment" of additional molecules as the contact area between the diffusing Au layer and molecules increases. For alkane monolayers, the molecular conductance measured with SDMD exhibited an exponential dependence on molecular length with a decay constant (β) of 0.90 per CH(2) group, comparable to that observed by other techniques. Molecular conductance values were determined for three azobenzene molecules, and correlated with the offset between the molecular HOMO and the contact Fermi level, as expected for hole-mediated tunneling. Current-voltage curves were obtained during metal deposition showed no change in shape for junctions containing 1, 2, and 10 molecules, implying minimal intermolecular interactions as single molecule devices transitioned into several molecules devices. SDMD represents a "soft" metal deposition method capable of providing single molecule conductance values, then providing quantitative comparisons to molecular junctions containing 10(6) to 10(10) molecules.
金属原子扩散到附着在导电表面的分子单层上,允许分子与金属进行电子接触,同时热量和结构干扰最小化。表面介导的金属沉积(SDMD)涉及“冷”扩散金属原子与分子之间的接触,这是由于分子受到金属蒸气的直接暴露的屏蔽。在金属扩散过程中测量通过分子层的电流,允许观察含有少至一个分子的结的分子电导率。在单层中,在单个沉积运行期间,观察到 1-10 个分子的离散电导台阶,这对应于扩散的 Au 层与分子之间的接触面积增加时,额外分子的“招募”。对于烷烃单层,通过 SDMD 测量的分子电导率表现出与分子长度的指数依赖性,其衰减常数(β)为每个 CH(2)基团 0.90,与其他技术观察到的相似。测定了三个偶氮苯分子的分子电导率,并与分子 HOMO 和接触费米能级之间的偏移相关联,这与空穴介导的隧穿一致。在金属沉积过程中获得的电流-电压曲线对于含有 1、2 和 10 个分子的结没有形状变化,这意味着随着单分子器件过渡到多个分子器件,分子间相互作用最小。SDMD 代表一种“软”金属沉积方法,能够提供单分子电导率值,然后与含有 10(6)至 10(10)个分子的分子结进行定量比较。