Zhao Cunlu, Yang Chun
School of Mechanical and Aerospace Engineering, Nanyang Technological University 50 Nanyang Avenue, Singapore 639798, Republic of Singapore.
Phys Rev E Stat Nonlin Soft Matter Phys. 2011 Jun;83(6 Pt 2):066304. doi: 10.1103/PhysRevE.83.066304. Epub 2011 Jun 9.
Electrokinetic boundary conditions are derived for ac electrokinetic phenomena over leaky dielectric (i.e., semiconducting) surfaces. Such boundary conditions correlate the electric potentials across a semiconductor-electrolyte interface (consisting of an electric double layer inside the electrolyte solution and a space charge layer inside the semiconductor) in an ac electric field with arbitrary wave forms. The presented electrokinetic boundary conditions allow for evaluation of the induced ζ potential contributed by both bond charges (due to electric polarization) and free charges (due to electric conduction) from the leaky dielectric materials. Two well-known limiting cases, (i) the conventional insulating boundary condition and (ii) the perfectly polarizable boundary condition, can be recovered from the generalized electrokinetic boundary conditions derived in the present paper. Subsequently, we demonstrate the implementation of the derived boundary conditions for analyzing the ac induced-charge electrokinetic flow around a semiconducting cylinder. The results show that the flow circulations exist around the semiconducting cylinder and become stronger in the ac field with a lower frequency and around the semiconducting cylinder with a higher conductivity.
推导了在漏电介质（即半导体）表面上交流电流体动力学现象的电动边界条件。此类边界条件将交流电场中任意波形下半导体 - 电解质界面（由电解质溶液内部的双电层和半导体内部的空间电荷层组成）上的电势关联起来。所提出的电动边界条件能够评估由漏电介质材料中的束缚电荷（由于电极化）和自由电荷（由于电传导）共同贡献的感应ζ电势。从本文推导的广义电动边界条件可以得到两种著名的极限情况：（i）传统绝缘边界条件和（ii）完全可极化边界条件。随后，我们展示了所推导边界条件在分析围绕半导体圆柱体的交流感应电荷流体动力学流动中的应用。结果表明，在半导体圆柱体周围存在流动环流，并且在低频交流电场中以及围绕具有较高电导率的半导体圆柱体时，流动环流会变得更强。
