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晶格缺陷近边结构电子能量损失的第一性原理赝势计算。

First principles pseudopotential calculation of electron energy loss near edge structures of lattice imperfections.

机构信息

Institute of Industrial Science, The University of Tokyo, 153-8505 Tokyo, Japan.

出版信息

Micron. 2012 Jan;43(1):37-42. doi: 10.1016/j.micron.2011.07.005. Epub 2011 Jul 14.

Abstract

Theoretical calculations of electron energy loss near edge structures (ELNES) of lattice imperfections, particularly a Ni(111)/ZrO₂(111) heterointerface and an Al₂O₃ stacking fault on the {1100} plane, are performed using a first principles pseudopotential method. The present calculation can qualitatively reproduce spectral features as well as chemical shifts in experiment by employing a special pseudopotential designed for the excited atom with a core-hole. From the calculation, spectral changes observed in O-K ELNES from a Ni/ZrO₂ interface can be attributable to interfacial oxygen-Ni interactions. In the O-K ELNES of Al₂O₃ stacking faults, theoretical calculation suggests that the spectral feature reflects coordination environment and chemical bonding. Powerful combinations of ELNES with a pseudopotential method used to investigate the atomic and electronic structures of lattice imperfections are demonstrated.

摘要

使用第一性原理赝势方法,对晶格缺陷的近边结构(ELNES)的电子能量损失进行了理论计算,特别是 Ni(111)/ZrO₂(111) 异质界面和 {1100} 面上的 Al₂O₃ 堆垛层错。通过采用专为具有核心空位的激发原子设计的特殊赝势,本计算可以定性地再现实验中的谱特征和化学位移。从计算中可以看出,从 Ni/ZrO₂ 界面观察到的 O-K ELNES 的光谱变化可归因于界面氧-Ni 相互作用。在 Al₂O₃ 堆垛层错的 O-K ELNES 中,理论计算表明光谱特征反映了配位环境和化学键合。证明了 ELNES 与用于研究晶格缺陷的原子和电子结构的赝势方法的强大组合。

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