Aqueous solutions for low-temperature photoannealing of functional oxide films: reaching the 400 °C Si-technology integration barrier.

Functional oxide films were obtained at low temperature by combination of aqueous precursors and a UV-assisted annealing process (aqueous photochemical solution deposition). For a PbTiO(3) model system, functional ferroelectric perovskite films were prepared at only 400 °C, a temperature compatible with the current Si-technology demands. Intrinsically photosensitive and environmentally friendly aqueous precursors can be prepared for most of the functional multimetal oxides, as additionally demonstrated here for multiferroic BiFeO(3), yielding virtually unlimited possibilities for this low-temperature fabrication technology.