Oxide double-layer nanocrossbar for ultrahigh-density bipolar resistive memory.
作者信息
Chang Seo Hyoung, Lee Shin Buhm, Jeon Dae Young, Park So Jung, Kim Gyu Tae, Yang Sang Mo, Chae Seung Chul, Yoo Hyang Keun, Kang Bo Soo, Lee Myoung-Jae, Noh Tae Won
机构信息
ReCFI, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea.
出版信息
Adv Mater. 2011 Sep 15;23(35):4063-7. doi: 10.1002/adma.201102395. Epub 2011 Aug 2.
PMID:21809400
Abstract
摘要
Zotero 插件