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本文引用的文献
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Homogeneous barrier modulation of TaOx/TiO2 bilayers for ultra-high endurance three-dimensional storage-class memory.
Nanotechnology. 2014 Apr 25;25(16):165202. doi: 10.1088/0957-4484/25/16/165202.
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Oxide double-layer nanocrossbar for ultrahigh-density bipolar resistive memory.
Adv Mater. 2011 Sep 15;23(35):4063-7. doi: 10.1002/adma.201102395. Epub 2011 Aug 2.
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Electronic structure differences in ZrO2 vs HfO2.
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