Physics Department, Kalna College, Kalna, Burdwan, India 713409.
Langmuir. 2011 Sep 6;27(17):11246-50. doi: 10.1021/la201780c. Epub 2011 Aug 12.
Fabrication of high-performance organic thin film transistors (OTFTs) with solution processed organic charge transfer complex (TTF-TCNQ) film as bottom contact source-drain electrodes is reported. A novel capillary based method was used to deposit the source-drain electrodes from solution and to create the channel between the electrodes. Both p- and n-type OTFTs have been fabricated with solution deposited organic charge transfer film as contact electrodes. Comparison of the device performances between OTFTs with TTF-TCNQ as source-drain electrodes and those with Au electrodes (both top and bottom contact) indicate that better results have been obtained in organic complex film contacted OTFT. The high mobility, low threshold voltage, and efficient carrier injection in both types of OTFTs implies the potential use of the TTF-TCNQ based complex material as low-cost contact electrodes. The lower work function of the TTF-TCNQ electrode and better contact of the complex film with the organic thin film owing to the organic-organic interface results in efficient charge transfer into the semiconductor yielding high device performance. The present method having organic metal as contact materials promises great potential for the fabrication of all-organics and plastic electronics devices with high throughput and low-cost processing.
本文报道了使用溶液处理的有机电荷转移复合物（TTF-TCNQ）薄膜作为底接触源漏电极制备高性能有机薄膜晶体管（OTFT）的方法。采用一种新颖的基于毛细作用的方法从溶液中沉积源漏电极，并在电极之间形成沟道。采用溶液沉积的有机电荷转移薄膜作为接触电极制备了 p 型和 n 型 OTFT。将具有 TTF-TCNQ 作为源漏电极的 OTFT 与具有 Au 电极（顶接触和底接触）的 OTFT 的器件性能进行比较，结果表明，在有机复合物薄膜接触的 OTFT 中获得了更好的结果。两种类型的 OTFT 都具有较高的迁移率、较低的阈值电压和有效的载流子注入，这意味着基于 TTF-TCNQ 的复合物材料作为低成本接触电极具有潜在的应用前景。由于有机-有机界面，TTF-TCNQ 电极的功函数较低，且复合物薄膜与有机薄膜的接触更好，从而有效地将电荷转移到半导体中，得到高性能的器件。由于本方法采用有机金属作为接触材料，因此有望通过高吞吐量和低成本处理来制备全有机和塑料电子器件。
