Tegenkamp Christoph
Institut für Festkörperphysik, Gottfried Wilhelm Leibniz Universität Hannover, Appelstrasse 2, D-30167 Hannover, Germany.
J Phys Condens Matter. 2009 Jan 7;21(1):013002. doi: 10.1088/0953-8984/21/1/013002. Epub 2008 Dec 1.
Vicinal surfaces are currently the focus of research. The regular arrangements of atomic steps on a mesoscopic scale reveal the possibility to functionalize these surfaces for technical applications, e.g. nanowires, catalysts, etc. The steps of the vicinal surface are well-defined defect structures of atomic size for nucleation of low-dimensional nanostructures. The concentration and therefore the coupling between the nanostructures can be tuned over a wide range by simply changing the inclination angle of the substrate. However, the coupling of these nano-objects to the substrate is just as important in controlling their electronic or chemical properties and making a functionality useable. On the basis of stepped insulating films, these aspects are fulfilled and will be considered in the first part of this review. Recent results for the epitaxial growth of wide bandgap insulating films (CaF(2), MgO, NaCl, BaSrO) on metallic and semiconducting vicinal substrates (Si(100), Ge(100), Ag(100)) will be presented. The change of the electronic structure, the adsorption behavior as well as the kinetics and energetics of color centers in the presence of steps is discussed. The successful bridging of the gap between the atomic and mesoscopic world, i.e. the functionalization of vicinal surfaces by nanostructures, is demonstrated in the second part by metal adsorption on semiconducting surfaces. For (sub)monolayer coverage these systems have in common that the surface states do not hybridize with the support, i.e. the semiconducting surfaces are insulating. Here I will focus on the latest results of macroscopic transport measurements on Pb quantum wires grown on vicinal Si(111) showing indeed a one-dimensional transport behavior.
相邻表面目前是研究的重点。介观尺度上原子台阶的规则排列揭示了将这些表面功能化以用于技术应用的可能性，例如纳米线、催化剂等。相邻表面的台阶是低维纳米结构成核的原子尺寸的明确缺陷结构。通过简单地改变衬底的倾斜角度，可以在很宽的范围内调节纳米结构之间的浓度以及耦合。然而，这些纳米物体与衬底的耦合对于控制它们的电子或化学性质以及使功能可用同样重要。基于阶梯状绝缘膜，这些方面得以实现，并将在本综述的第一部分进行讨论。将展示宽带隙绝缘膜（CaF₂、MgO、NaCl、BaSrO）在金属和半导体相邻衬底（Si(100)、Ge(100)、Ag(100)）上外延生长的最新结果。讨论了在有台阶存在时电子结构的变化、吸附行为以及色心的动力学和能量学。在第二部分中，通过金属吸附在半导体表面上，展示了成功弥合原子世界和介观世界之间的差距，即通过纳米结构对相邻表面进行功能化。对于（亚）单层覆盖，这些系统的共同之处在于表面态不与载体杂化，即半导体表面是绝缘的。在这里，我将重点关注在相邻Si(111)上生长的Pb量子线的宏观输运测量的最新结果，这些结果确实显示出一维输运行为。
