Kim Woo-Hee, Park Sang-Joon, Son Jong-Yeog, Kim Hyungjun
Department of Material Science and Engineering, POSTECH (Pohang University of Science and Technology), San 31, Hyoja-Dong, Nam-Gu, Pohang 790-784, Korea.
Nanotechnology. 2008 Jan 30;19(4):045302. doi: 10.1088/0957-4484/19/04/045302. Epub 2008 Jan 4.
We fabricated metallic nanostructures directly on Si substrates through a hybrid nanoprocess combining atomic layer deposition (ALD) and a self-assembled anodic aluminum oxide (AAO) nanotemplate. ALD Ru films with Ru(DMPD)(EtCp) as a precursor and O(2) as a reactant exhibited high purity and low resistivity with negligible nucleation delay and low roughness. These good growth characteristics resulted in the excellent conformality for nanometer-scale vias and trenches. Additionally, AAO nanotemplates were fabricated directly on Si and Ti/Si substrates through a multiple anodization process. AAO nanotemplates with various hole sizes (30-100 nm) and aspect ratios (2:1-20:1) were fabricated by controlling the anodizing process parameters. The barrier layers between AAO nanotemplates and Si substrates were completely removed by reactive ion etching (RIE) using BCl(3) plasma. By combining the ALD Ru and the AAO nanotemplate, Ru nanostructures with controllable sizes and shapes were prepared on Si and Ti/Si substrates. The Ru nanowire array devices as a platform for sensor devices exhibited befitting properties of good ohmic contact and high surface/volume ratio.
我们通过结合原子层沉积（ALD）和自组装阳极氧化铝（AAO）纳米模板的混合纳米工艺，直接在硅衬底上制备了金属纳米结构。以Ru（DMPD）（EtCp）作为前驱体、O₂作为反应物的ALD Ru膜表现出高纯度和低电阻率，成核延迟可忽略不计且粗糙度低。这些良好的生长特性使得纳米级通孔和沟槽具有出色的保形性。此外，通过多次阳极氧化工艺，直接在硅和钛/硅衬底上制备了AAO纳米模板。通过控制阳极氧化工艺参数，制备了具有各种孔径（30 - 100纳米）和纵横比（2:1 - 20:1）的AAO纳米模板。使用BCl₃等离子体通过反应离子蚀刻（RIE）完全去除了AAO纳米模板和硅衬底之间的阻挡层。通过结合ALD Ru和AAO纳米模板，在硅和钛/硅衬底上制备了尺寸和形状可控的Ru纳米结构。作为传感器器件平台的Ru纳米线阵列器件表现出良好的欧姆接触和高表面/体积比等合适特性。
