Li Hong, Zhang Qing, Marzari Nicola
Microelectronics Center, School of Electrical and Electronics Engineering, Nanyang Technological University, S1-B2c-20, 639798, Singapore.
Nanotechnology. 2008 Apr 30;19(17):175203. doi: 10.1088/0957-4484/19/17/175203. Epub 2008 Mar 25.
The influences of trapped charges on carrier transport in carbon nanotubes (CNTs) are studied using CNT field-effect transistors with a partial top-gate and a global back-gate. Trapped charges induced by the global back-gate voltage sweeping (± 20 V) promote the device from 'ON' states to near 'OFF' states at zero gate voltage. The channel conductance and field-effect mobility of the device are significantly affected by the pre-trapped charges induced by global back-gate voltage pulses. When the partial top-gate is swept, the pre-trapped charges induced by the global back-gate voltage pulses change the conduction type of the device. In contrast, the pre-trapped charges induced by the partial top-gate voltage pulses could force the device to the 'ON' or 'OFF' state during the top-gate sweeping (± 4 V).
利用具有局部顶栅和全局背栅的碳纳米管（CNT）场效应晶体管，研究了俘获电荷对碳纳米管中载流子输运的影响。通过全局背栅电压扫描（±20 V）诱导的俘获电荷，在零栅极电压下可使器件从“开”状态转变为接近“关”状态。全局背栅电压脉冲诱导的预俘获电荷对器件的沟道电导和场效应迁移率有显著影响。当局部顶栅扫描时，全局背栅电压脉冲诱导的预俘获电荷会改变器件的导电类型。相比之下，局部顶栅电压脉冲诱导的预俘获电荷在顶栅扫描（±4 V）期间可使器件处于“开”或“关”状态。
