Unalan Husnu Emrah, Hiralal Pritesh, Rupesinghe Nalin, Dalal Sharvari, Milne William I, Amaratunga Gehan A J
Nanotechnology. 2008 Jun 25;19(25):255608. doi: 10.1088/0957-4484/19/25/255608. Epub 2008 May 15.
A solution growth approach for zinc oxide (ZnO) nanowires is highly appealing because of the low growth temperature and possibility for large area synthesis. Reported reaction times for ZnO nanowire synthesis, however, are long, spanning from several hours to days. In this work, we report on the rapid synthesis of ZnO nanowires on various substrates (such as poly(ethylene terephthalate) (PET), silicon and glass) using a commercially available microwave oven. The average growth rate of our nanowires is determined to be as high as 100 nm min(-1), depending on the microwave power. Transmission electron microscopy analysis revealed a defect-free single-crystalline lattice of the nanowires. A detailed analysis of the growth characteristics of ZnO nanowires as functions of growth time and microwave power is reported. Our work demonstrates the possibility of a fast synthesis route using microwave heating for nanomaterials synthesis.
由于生长温度低且有大面积合成的可能性,氧化锌(ZnO)纳米线的溶液生长方法极具吸引力。然而,据报道,ZnO纳米线合成的反应时间很长,从几小时到几天不等。在这项工作中,我们报告了使用市售微波炉在各种衬底(如聚对苯二甲酸乙二酯(PET)、硅和玻璃)上快速合成ZnO纳米线的情况。根据微波功率,我们的纳米线平均生长速率高达100纳米每分钟。透射电子显微镜分析表明纳米线具有无缺陷的单晶晶格。本文报道了对ZnO纳米线生长特性随生长时间和微波功率变化的详细分析。我们的工作证明了使用微波加热进行纳米材料合成的快速合成路线的可能性。